NIST comparison of the quantized hall resistance and the realization of the SI OHM through the calculable capacitor

被引：67

作者：

Jeffery, AM

Elmquist, RE

Lee, LH

Shields, JQ

Dziuba, RF

机构：

[1] National Institute of Standards and Technology (NIST), Electronics and Electrical Engineering Laboratory, U.S. Department of Commerce, Gaithersburg

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1997年 / 46卷 / 02期

关键词：

D O I：

10.1109/19.571828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The latest NIST result from the comparison of the quantized Hall resistance (QHR) with the realization of the SI ohm obtained from the NIST calculable capacitor is reported, A small difference between the 1988 result and the present result has led to a re-evaluation of the sources and magnitudes of possible systematic errors.

引用

页码：264 / 268

页数：5

共 10 条

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