Future of power semiconductors

被引：16

作者：

Majumdar, G ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Power Device Works, Fukuoka, Japan

来源：

PESC 04: 2004 IEEE 35TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/PESC.2004.1355704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A brief history of power semiconductor devices, starting from its bipolar based origin to the present day IGBT Modules and Intelligent Power Modules (IPMs), has been reviewed in the beginning of this paper. The review is then followed by an analysis of the changing requirements from the application fields and a projection of future growth for power semiconductors to comply with such needs. The paper particularly details the progresses made for near future options related to the IGBT chip technology, including a 'reverse-conducting type' and a 'reverse-blocking type' device concepts, and prospects of silicon carbide based power semiconductors for far future power conversion applications.

引用

页码：10 / 15

页数：6