DX-behavior of Si in AlN

被引：122

作者：

Zeisel, R ^{[1
]}

Bayerl, MW ^{[1
]}

Goennenwein, STB ^{[1
]}

Dimitrov, R ^{[1
]}

Ambacher, O ^{[1
]}

Brandt, MS ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.61.R16283

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In Si doped AlN, a large persistent photoconductivity is found for temperatures below 60 K after exposure to light with photon energies above 1.5 eV. Simultaneously, a persistent electron spin resonance signal is observed with an isotropic g factor of 1.9885 due to an effective mass donor state, while no spin resonance signal is detectable after cooling the sample in the dark. Both observations show that Si undergoes a DX-like metastability in this material. Based on the experimental findings, a detailed configuration diagram is proposed.

引用

页码：R16283 / R16286

页数：4

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