Temperature dependence of turn-on process in 4H-SiC thyristors

被引：8

作者：

Dyakonova, NV ^{[1
]}

Levinshtein, ME ^{[1
]}

Palmour, JW ^{[1
]}

Rumyantsev, SL ^{[1
]}

Singh, R ^{[1
]}

机构：

[1] CREE RES INC,DURHAM,NC 27713

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 10期

关键词：

thyristors; silicon carbide;

D O I：

10.1049/el:19970563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The turn-on process in 4H-SiC thyristors with a forward blocking voltage U-b similar or equal to 400V has been investigated in the temperature rang 160-500K. The time constant of the current rise tau(r) decreases monotonically with temperature, increasing from tau(r) = 63ns at T = 160K to tau(r) = 1.9ns at T = 495K.

引用

页码：914 / 915

页数：2