Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions

被引:13
作者
Hamidi, A
Coquery, G
机构
[1] New Technologies Laboratory, INRETS
来源
MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期
关键词
D O I
10.1016/S0026-2714(97)00154-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper deals with ageing parameters of high power IGBT modules in traction applications. Using the results of a great number of power cycling tests on 400A modules, it shows that, in addition to the junction temperature excursion, other parameters like the maximal chip temperature and the current density are involved in thermal fatigue failures. Besides, contact temperature measurements achieved on IGBT chip surface in cycling conditions to localise the maximal thermomechanical stress are presented and correlated with modules failure analysis. The role of the current density in the ageing process is finally shown by determining its influence on the temperature gradient on chip surface. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:1755 / 1758
页数:4
相关论文
共 4 条
[1]  
COQUERY G, 1995, EPE, P1060
[2]  
COQUERY G, 1993, ESREF, P259
[3]  
JACOB P, 1995, P IEE COL IGBT PROP
[4]  
Poech M.-H., 1996, EuPac '96. 2nd European Conference on Electronic Packaging Technology and 8th International Conference on Interconnection Technology in Electronics, P128