Growth and dielectric behavior of radio frequency magnetron-sputtered lead magnesium niobate thin films

被引:18
作者
Jaydeep, S [1 ]
Yadav, S
Malla, BP
Kulkarni, AR
Venkatramani, N
机构
[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 40076, Maharashtra, India
[2] Indian Inst Technol, Adv Ctr Res Elect, Bombay 400076, Maharashtra, India
关键词
Dielectric films - Electrostriction - Grain size and shape - Lead compounds - Magnetron sputtering - Permittivity - X ray analysis;
D O I
10.1063/1.1517175
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lead magnesium niobate (PMN) thin films have been grown on quartz/Cr/Au substrates from a single target source by rf magnetron sputtering at room temperature. Sputtering parameters and the post-annealing temperature have been optimized to obtain phase pure PMN films. Grain sizes, obtained from atomic force microscopy and x-ray line broadening, show nanosized grains of nearly 45 nm. Dielectric response of photolithographically patterned quartz/Cr/Au/PMN/Au structures have been studied. The effect of film thickness and frequency on the dielectric constant has been examined at room temperature. The dielectric constant and remanent polarization show linear thickness dependence. (C) 2002 American Institute of Physics.
引用
收藏
页码:3840 / 3842
页数:3
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