Measuring the elastic modulus and ultimate strength of Low-k dielectric materials by means of the bulge test

被引:9
作者
Xiang, Y [1 ]
Tsui, TY [1 ]
Vlassak, JJ [1 ]
McKerrow, AJ [1 ]
机构
[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
来源
PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2004年
关键词
D O I
10.1109/IITC.2004.1345717
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiNx) freestanding membranes. Evaluation of two different OSG films revealed significant differences in Young's modulus and residual stress between the two dielectric films. Young's modulus of both types of OSGs was independently measured using nanoindentation and found to be at least 8.5-17% greater than that measured using the bulge test. It is well known, and demonstrated herein, that modulus data obtained from nanoindentation is influenced by mechanical properties of the substrate. Operating without this constraint, it is believed that data obtained using the bulge test more accurately represents the intrinsic mechanical properties of OSG thin films.
引用
收藏
页码:133 / 135
页数:3
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