Charge transport processes in organic light-emitting devices

被引:62
作者
Scott, JC [1 ]
Brock, PJ
Salem, JR
Ramos, S
Malliaras, GG
Carter, SA
Bozano, L
机构
[1] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[3] Univ Calif Santa Cruz, Dept Phys, Santa Cruz, CA 95064 USA
基金
美国国家科学基金会;
关键词
organic electroluminescence; charge mobility; charge injection; charge recombination; models;
D O I
10.1016/S0379-6779(99)00449-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The luminous efficiency of organic light-emitting diodes depends on the recombination probability of electrons injected at the cathode and holes at the anode. We have developed a numerical model to calculate the recombination profile in single- and multilayer structures, taking into account the built-in electric field, the charge injection process at each electrode, hopping transport with field-dependent mobilities, charge diffusion, trapping and Langevin recombination. By comparison of the simulation results, as well as approximate analytic solutions, with experimental data on MEH-PPV-based devices, we find that injection is thermionic with Schottky barriers for some electrode metals that are low enough to be considered Ohmic. Except at voltages close to threshold, diffusion and trapping effects are negligible. Both electrons and holes are mobile, with a field dependence that is independently confirmed both by single-carrier space-charge-limited current measurements and transient time-of-flight techniques. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:289 / 293
页数:5
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