Defect annealing kinetics in irradiated 6H-SiC

被引：34

作者：

Weber, WJ ^{[1
]}

Jiang, W ^{[1
]}

Thevuthasan, S ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Richland, WA 99352 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 166卷

关键词：

silicon carbide; defects; annealing; ion irradiation; RBS/channeling;

D O I：

10.1016/S0168-583X(99)00868-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Isochronal and isothermal annealing of ion-irradiation damage on the Si sublattice in 6H SiC has been investigated experimentally by in situ Rutherford backscattering spectrometry in channeling geometry (RBS/C). At low ion fluences corresponding to dilute concentrations of irradiation-induced defects, complete recovery of disorder on the Si sublattice can occur below room temperature. The implantation of helium impedes the defect recovery processes at low temperatures. Below room temperature, the thermal recovery of defects on the Si sublattice has an activation energy on the order of 0.25 +/- 0.1 eV. Recovery of disorder on the Si sublattice above 570 K has an activation energy on the order of 1.5 +/- 0.3 eV. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：410 / 414

页数：5

共 12 条

[1]

[Anonymous], 1956, PHYS REV

[2] Computer simulation of a 10 keV Si displacement cascade in SiC [J].