Giant dielectric permittivity observed in Li and Ti doped NiO

被引:652
作者
Wu, JB [1 ]
Nan, CW [1 ]
Lin, YH [1 ]
Deng, Y [1 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
关键词
D O I
10.1103/PhysRevLett.89.217601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A giant low-frequency dielectric constant (epsilon(o) similar to 10(5)) near room temperature was observed in Li,Ti co-doped NiO ceramics. Unlike currently best-known high epsilon(o) ferroelectric-related materials, the doped oxide is a nonperovskite, lead-free, and nonferroelectric material. It is suggested that the giant dielectric constant response of the doped NiO could be enhanced by a grain boundary-layer mechanism as found in boundary-layer capacitors. In addition, there is about a one-hundred-fold drop in the dielectric constant at low temperature. This anomaly is attributed to a thermally excited relaxation process rather than a thermally driven phase transition, as for that yielding ferroelectrics.
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收藏
页码:217601 / 217601
页数:4
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