Highly efficient diode-pumped 3-mu m Er3+:BaY2F8 laser

被引：24

作者：

Eichler, HJ

Findeisen, J

Liu, B

Kaminskii, AA

Butachin, AV

Peuser, P

机构：

[1] RUSSIAN ACAD SCI,INST CRYSTALLOG,MOSCOW 117333,RUSSIA

[2] DAIMLER BENZ AG,FORSCH & TECH,D-81663 MUNICH,GERMANY

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

crystals; diodes; erbium materials; infrared radiation effects; laser biomedical applications; solid lasers;

D O I：

10.1109/2944.585819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A systematic investigation on a series of monoclinic Er3+:BaY2F8 crystals with different dopant concentrations (C-Er = 5%-30%) and crystal orientations was conducted to optimize the laser performance in this new 3-mu m laser medium by laser diode pumping, The highest slope efficiency of 32% near the quantum defect (35%) was obtained with a 10% doped Er3+:BaY2F8 crystal with the orientation (010) and a length of 3.5 mm, A maximum output power of 160 mW was achieved at an absorbed pump power of 550 mW at a wavelength of 970 nm.

引用

页码：90 / 94

页数：5

共 8 条

[1] DIODE AND DYE PUMPED CW LASER IN BAY2F8-ER3+ AT 2.7 MU-M [J].