A new process for deposition of the CdTe thin films

被引：14

作者：

Patil, VB ^{[1
]}

More, PD ^{[1
]}

Sutrave, DS ^{[1
]}

Shahane, GS ^{[1
]}

Mulik, RN ^{[1
]}

Deshmukh, LP ^{[1
]}

机构：

[1] Shivaji Univ, Ctr PG Studies, Dept Phys Appl Elect, Thin Film & Solar Studies Res Lab, Solapur 413003, Maharashtra, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2000年 / 65卷 / 03期

关键词：

new process; n-CdTe; hexagonal and cubic; band gap; direct transitions;

D O I：

10.1016/S0254-0584(00)00237-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An extremely simple and cheap method for deposition of the n-CdTe thin films is presented. Goad quality deposits are obtained at 75 degrees C, 10+/-0.5 pH, and deposition time equal to 90 min. Light grey coloured and uniform CdTe layers of approximately 0.3 mu m thick are obtained by this process. The compositional analyses showed that the baked CdTe films are little bit Cd-rich. The as-deposited CdTe layers are crystalline with a mixture of the hexagonal and cubic structures. The microscopic observations show some overgrowth on the grown spherical type crystallites which improve after baking at 100 degrees C. Optical studies revealed a high absorption coefficient (10(4) cm(-1)) with a direct gap of 1.45 eV. The films are of the n-type conduction with a room temperature electrical resistivity of 10(6) Omega cm. The activation energies of an electrical conduction have been determined and the possible conduction mechanism is discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：282 / 287

页数：6

共 19 条

[1] ELECTROLESS DEPOSITION OF CDTE THIN-FILMS [J].