Photoluminescence characterization of high-purity synthesized diamond

被引:8
作者
Horiuchi, K [1 ]
Nakamura, K [1 ]
Yamashita, S [1 ]
Kuwata-Gonokami, M [1 ]
机构
[1] UNIV TOKYO, FAC ENGN, DEPT APPL PHYS, BUNKYO KU, TOKYO 113, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 11B期
关键词
diamond; high-temperature high-pressure synthesis; photoluminescence; free exciton; phosphorescence;
D O I
10.1143/JJAP.36.L1505
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence (PL) properties of high-purity synthesized diamond are studied using the 5th-harmonic of a Nd:YAG laser. Free-exciton related emissions are dominant even at room temperature, which confirms high crystal perfection of the sample. The intensity of the FE-related peaks decreases at temperatures below 150 K, and existence of shallow trap centers is suggested. Also there exists a long-lived broad band in the visible region. These features cannot be observed by cathodoluminescence, and PL characterization is proved to be effective for characterization of such high-quality diamond.
引用
收藏
页码:L1505 / L1507
页数:3
相关论文
共 15 条
[1]   BORON, DOMINANT ACCEPTOR IN SEMICONDUCTING DIAMOND [J].
CHRENKO, RM .
PHYSICAL REVIEW B, 1973, 7 (10) :4560-4567
[2]   NATURE OF ACCEPTOR CENTRE IN SEMICONDUCTING DIAMOND [J].
COLLINS, AT ;
WILLIAMS, AW .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (13) :1789-&
[3]   UNUSUAL PHOSPHORESCENCE OF A DIAMOND [J].
CUSTERS, JFH .
PHYSICA, 1952, 18 (8-9) :489-496
[4]  
DAVIES G, 1994, PROPERTIES GROWTH DI, P225
[5]   ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].
DEAN, PJ .
PHYSICAL REVIEW, 1967, 157 (03) :655-&
[6]   BOUND EXCITONS AND DONOR-ACCEPTOR PAIRS IN NATURAL AND SYNTHETIC DIAMOND [J].
DEAN, PJ .
PHYSICAL REVIEW, 1965, 139 (2A) :A588-&
[7]  
HORIUCHI K, UNPUB
[8]  
MURAKAMI T, 1996, IN PRESS P 5 INT C N
[9]  
SHARP SJ, 1996, P DIAM EL APPL BOST, P124
[10]  
SIDDONS DP, 1976, IND DIAMOND REV, P441