Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices

被引：29

作者：

Fang, XM

Namjou, K

Chao, IN

McCann, PJ

Dai, N

Tor, G

机构：

[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA

[3] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

[4] Univ Clermont Ferrand, Ctr Sci & Tech, F-63006 Clermont Ferrand, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

PbSrSe layers and PbSe/PbSrSe multiple quantum well (MQW) structures have been grown on BaF(2) (111) substrates by molecular beam epitaxy. The lattice constant of the PbSrSe alloy was determined by x-ray diffraction, and both the refractive index and absorption edge of the PbSrSe alloy with Sr composition up to 0.23 were obtained from Fourier transform infrared transmission spectra at room temperature. MQW structures exhibit strong photoluminescence (PL) in the 3-5 mu m wavelength range ar room temperature, The PL intensity decreases monotonically with increasing temperature below 230 K. (C) 2000 American Vacuum Society.

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页码：1720 / 1723

页数：4

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