Properties of a-Se for use in flat panel X-ray image detectors

被引：27

作者：

Kasap, SO

Haugen, C

Nesdoly, M

Rowlands, JA

机构：

[1] Univ Saskatchewan, Dept Elect Engn, Saskatoon, SK S7N 5A9, Canada

[2] Univ Toronto, Sunnybrook Hlth Sci Ctr, Dept Med Biophys, Toronto, ON M4N 3N5, Canada

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00954-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The present paper examines why a-Se has become the key photoconductor material in flat panel direct conversion X-ray image detectors. We critically examine the X-ray sensitivity of stabilized a-Se layers as a function of electric field and mean photon energy. The radiation energy W+/- absorbed per free electron-hole pair liberated for photoconduction in both a-Se and a-Si:H seem to follow the Que-Rowlands rule of W+/- approximate to 2.2 E-g + E-phonon for amorphous semiconductors. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1163 / 1167

页数：5

共 18 条

[1] INTRINSIC PHOTOCONDUCTION IN ANTHRACENE SINGLE-CRYSTALS - ELECTRIC-FIELD DEPENDENCE OF HOLE AND ELECTRON QUANTUM YIELDS
CHANCE, RR
BRAUN, CL
[J]. JOURNAL OF CHEMICAL PHYSICS, 1973, 59 (05) : 2269 - 2272
[2] RESPONSE OF AMORPHOUS-SILICON P-I-N DETECTORS TO IONIZING PARTICLES
DUBEAU, J
POCHET, T
HAMEL, LA
EQUER, B
KARAR, A
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 54 (04) : 458 - 471
[3] FIEDLER H, 1981, J INFORM REC MATER, V9, P229
[4] SIGNAL FORMATION IN A-SI-H PARTICLE DETECTORS
HAMEL, LA
DUBEAU, J
POCHET, T
EQUER, B
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (02) : 251 - 254
[5] Charge transport and electron-hole-pair creation energy in stabilized a-Se x-ray photoconductors
Haugen, C
Kasap, SO
Rowlands, J
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (03) : 200 - 207
[6] GEMINATE RECOMBINATION OF X-RAY EXCITED ELECTRON-HOLE PAIRS IN ANTHRACENE
HUGHES, RC
[J]. JOURNAL OF CHEMICAL PHYSICS, 1971, 55 (12) : 5442 - +
[7] HUGHES RC, 1971, C EL INS DIEL PHEN A, P8
[8] JACOBS J, 1956, ELECTRON ENG, V75, P158
[9] KASAP SO, IN PRESS J MAT SCI M
[10] KASAP SO, 1991, HDB IMAGING MATERIAL, pCH8

← 1 2 →