In situ characterization of thin Si1-xGex films on Si(100) by spectroscopic ellipsometry

被引：10

作者：

Akazawa, H ^{[1
]}

机构：

[1] NTT, Telecommun Energy Labs, Atsugi, Kanagawa 2430198, Japan

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

关键词：

ellipsometry; silicon; germanium; surface roughness;

D O I：

10.1016/S0040-6090(00)00797-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

dThe composition and surface roughness of thin Si1-xGex films grown on Si(100) can be evaluated in-situ by using the simple procedure described here for analyzing dielectric functions. By using the Lorenzian-type reference dispersion relation and a minimum film thickness until saturation of the shape around the E-1 critical point, the E-1 energy is determined by line-shape analysis. The Ge composition x derived from the E-1 energy agreed, with uncertainties of +/-0.05, with values in the literature. The correspondence between atomic images obtained by transmission electron microscopy and the surface roughness layer height obtained from linear regression analysis of the dielectric function is discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：157 / 160

页数：4

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