Microstructure and electrical properties of gale SiO2 containing Ge nanoclusters for memory applications

MOSFETs with gateoxides containing nanoclusters (Si, Ge, Sn, Sb) fabricated with different techniques (implantation, LPCVD, sputtering) are very promising for future memories. This contribution reports on results obtained on Ge-implanted MOS capacitors. By varying the implantation and annealing parameters, the Ge depth profile and the cluster size and distribution can be controlled. The experimental results an explained by a theoretical model, which is based on TRIM calculations, rate-equation studies and 3D kinetic Monte Carlo simulations. The electrical properties of gate SiO2 containing Ge nanoclusters are investigated in detail with emphasis on its feasibility for memory applications. (C) 2000 Elsevier Science Ltd. All rights reserved.