Critical exponents at the superconductor-insulator transition in dirty-boson systems

被引:31
作者
Herbut, IF [1 ]
机构
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 21期
关键词
D O I
10.1103/PhysRevB.61.14723
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
I obtain the inverse of the correlation length exponent at the superfluid-Bose-glass quantum critical point as a series in a small parameter root d-1, with d being the dimensionality of the system, and compute the two lowest terms. For d=2, I find v(s)=0.81 and v(c)=1.03 for short-range and Coulomb interactions between bosons, respectively. When combined with the exact Values of the dynamical critical exponents, these results are in quantitative agreement with experiments on onset of superfluidity in He-4 in porous glasses and on the superconductor-insulator transition in homogeneous metallic films.
引用
收藏
页码:14723 / 14726
页数:4
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