Cr:LiSrAlF6 optical waveguides defined by ion beam implantation

被引:7
作者
Chandler, PJ
Huang, X
Townsend, PD
Hamelin, N
Chow, YT
机构
[1] UNIV SUSSEX,DEPT PHYS,BRIGHTON BN1 9QH,E SUSSEX,ENGLAND
[2] CITY UNIV HONG KONG,DEPT ELECT ENGN,KOWLOON,HONG KONG
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1016/S0168-583X(96)00985-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Planar optical waveguides have been fabricated in the laser material Cr: LiSrAlF6 using ion implantation. The 2 MeV He+ implant forms a low refractive index optical barrier at the end of the ion range, with an index decrease of similar to 2.5% for a dose of 2 x 10(16) ions/cm(2) at 77 K. The index at the surface (electronic stopping region) is slightly increased by similar to 0.15%. Post-implant thermal, and pulsed laser surface annealing have been carried out and compared. It is shown how pulsed laser annealing can remove scattering features from the waveguide surface. Waveguide losses have been measured at 488 and 633 nm by end-fire coupling, and are in the region of a few dB/cm. The waveguide absorption spectrum measured by white light end-coupling has been determined, and suggests that the charge state of the Cr3+ remains predominantly unchanged. The study shows that ion implantation is a possible way for making Cr: LiSrAlF6 waveguide lasers.
引用
收藏
页码:528 / 532
页数:5
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