Deposition of CdS thin films by the successive ionic layer adsorption and reaction (SILAR) method

被引：103

作者：

Sankapal, BR ^{[1
]}

Mane, RS ^{[1
]}

Lokhande, CD ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

来源：

MATERIALS RESEARCH BULLETIN | 2000年 / 35卷 / 02期

关键词：

semiconductors; thin films; chemical synthesis; electron microscopy; X-ray diffraction;

D O I：

10.1016/S0025-5408(00)00210-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdS thin films were prepared by the successive ionic layer adsorption and reaction (SILAR) method. The structural, optical, and electrical characterizations were carried out using X-ray diffraction, scanning electron microscopy, optical absorption, and electrical resistivity methods. The CdS films were annealed at various temperatures (373-673 K) in nitrogen atmosphere for 30 min and their structural, optical, and electrical properties are reported. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：177 / 184

页数：8

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