Nonequilibrium effects in transport through quantum dots

被引:27
作者
Bascones, E [1 ]
Herrero, CP
Guinea, F
Schön, G
机构
[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
[2] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany
[3] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany
关键词
D O I
10.1103/PhysRevB.61.16778
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The role of nonequilibrium effects in conductance through quantum dots is investigated. Associated with single-electron tunneling are shake-up processes and the formation of excitoniclike resonances. They qualitatively change the low-temperature properties of the system. By quantum Monte Carlo methods we analyze the renormalization of the effective capacitance and the gate voltage-dependent conductance. The experimental relevance is discussed.
引用
收藏
页码:16778 / 16786
页数:9
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