Nonequilibrium effects in transport through quantum dots

被引：27

作者：

Bascones, E ^{[1
]}

Herrero, CP

Guinea, F

Schön, G

机构：

[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

[2] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany

[3] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.61.16778

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of nonequilibrium effects in conductance through quantum dots is investigated. Associated with single-electron tunneling are shake-up processes and the formation of excitoniclike resonances. They qualitatively change the low-temperature properties of the system. By quantum Monte Carlo methods we analyze the renormalization of the effective capacitance and the gate voltage-dependent conductance. The experimental relevance is discussed.

引用

页码：16778 / 16786

页数：9

共 63 条

[21] Frequency-dependent conductance of a tunnel junction [J].