Kinetic model for degradation of light-emitting diodes

被引：99

作者：

Chuang, SL ^{[1
]}

Ishibashi, A ^{[1
]}

Kijima, S ^{[1
]}

Nakayama, N ^{[1
]}

Ukita, M ^{[1
]}

Taniguchi, S ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 06期

关键词：

light-emitting diodes; quantum-well devices; semiconductor lasers;

D O I：

10.1109/3.585485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a kinetic model for the optical output degradation of light-emitting diodes based on the carrier-recombination enhanced defect motion. Our model leads to analytical solutions and universal curves for the optical output power and the defect density as a function of the normalized aging time with the initial quantum efficiency as the determining parameter. The theoretical results explain very well the time dependence of the II-VI light-emitting diodes under constant current aging condition. The faster aging rate with increasing bias current or temperature is also investigated both experimentally and theoretically, resulting in a very good agreement. Our model provides a quantitative description of the light-emitting diode aging characteristics for compound semiconductors in the presence of electron-hole recombination-enhanced defect generation.

引用

页码：970 / 979

页数：10

共 43 条

[41] EQUILIBRIUM TEMPERATURE IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION [J].

VIGNOLI, S ;

MEAUDRE, R ;

MEAUDRE, M .

PHYSICAL REVIEW B, 1994, 50 (11) :7378-7383

[42] THEORY OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

WEEKS, JD ;

TULLY, JC ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1975, 12 (08) :3286-3292

[43] RECOMBINATION-INDUCED DEFECT HEATING AND RELATED PHENOMENA [J].

YASSIEVICH, IN .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (08) :1433-1453

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