The interface of epitaxial SrTiO3 on silicon:: in situ and ex situ studies

被引:85
作者
Hu, XM
Li, H
Liang, Y
Wei, Y
Yu, Z
Marshall, D
Edwards, J
Droopad, R
Zhang, X
Demkov, AA
Moore, K
Kulik, J
机构
[1] Motorola Labs PSRL, Tempe, AZ 85284 USA
[2] Motorola PMCL, Tempe, AZ 85284 USA
关键词
D O I
10.1063/1.1536247
中图分类号
O59 [应用物理学];
学科分类号
摘要
The formation of interfacial layers between silicon and the overgrown epitaxial SrTiO3 as a function of the growth temperature has been studied in detail using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. Models for the chemical compositions and atomic bonding states have been established. With a good understanding of the mechanisms of the interfacial layer formations, the molecular-beam epitaxy growth process can be well controlled to form high-quality, single-crystalline oxide films, as well as a desired interface between the grown oxide and silicon substrate. The epitaxial relationship has been found to be SrTiO3 (001)parallel toSi(001), and SrTiO3 [100]parallel toSi[110]. (C) 2003 American Institute of Physics.
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收藏
页码:203 / 205
页数:3
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