Rad51 accumulation at sites of DNA damage and in postreplicative chromatin

被引:172
作者
Tashiro, S
Walter, J
Shinohara, A
Kamada, N
Cremer, T
机构
[1] Hiroshima Univ, Fac Med, Dept Pediat, Minami Ku, Hiroshima 7348551, Japan
[2] Univ Munich, Inst Anthropol & Human Genet, D-80333 Munich, Germany
[3] Hiroshima Univ, Res Inst Radiat Biol & Med, Hiroshima 7348551, Japan
[4] Univ Chicago, Dept Radiat & Cellular Oncol, Chicago, IL 60637 USA
[5] Hiroshima Univ, Fac Med, Dept Pediat, Hiroshima, Japan
关键词
Rad51; DNA damage; microirradiation; postreplicative DNA repair; indirect immunofluorescence;
D O I
10.1083/jcb.150.2.283
中图分类号
Q2 [细胞生物学];
学科分类号
071009 ; 090102 ;
摘要
Rad51, a eukaryotic RecA homologue, plays a central role in homologous recombinational repair of DNA double-strand breaks (DSBs) in yeast and is conserved from yeast to human. Rad51 shows punctuate nuclear localization in human cells, called Rad51 foci, typically during the S phase (Tashiro, S., N. Kotomura, A. Shinohara, K. Tanaka, K. Ueda, and N. Kamada. 1996. Oncogene. 12:2165-2170). However, the topological relationships that exist in human S phase nuclei between Rad51 foci and damaged chromatin have not been studied thus far. Here, we report on ultraviolet microirradiation experiments of small nuclear areas and on whole cell ultraviolet C (UVC) irradiation experiments performed with a human fibroblast cell line. Before UV irradiation, nuclear DNA was sensitized by the incorporation of halogenated thymidine analogues. These experiments demonstrate the redistribution of Rad51 to the selectively damaged, labeled chromatin. Rad51 recruitment takes place from Rad51 foci scattered throughout the nucleus of nonirradiated cells in S phase. We also demonstrate the preferential association of Rad51 foci with postreplicative chromatin in contrast to replicating chromatin using a double labeling procedure with halogenated thymidine analogues,This finding supports a role of Rad51 in recombinational repair processes of DNA damage present in postreplicative chromatin.
引用
收藏
页码:283 / 291
页数:9
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