A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

被引:25
作者
Lucovsky, G
Whitten, JL
Zhang, Y
机构
[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[2] N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USA
关键词
transition metal oxides; silicates and aluminates; high-k dielectrics; electronic structure; local molecular orbital model;
D O I
10.1016/S0038-1101(02)00160-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A classification scheme that separates non-crystalline dielectrics into three groups with different amorphous morphologies reveals an approximately linear relationship between oxygen atom coordination and average bond ionicity. When applied to transition metal (TM) and rare earth (RE) lanthanide oxides, and their silicate and aluminate alloys, this approach demonstrates a correlation between stability against crystallization and oxygen atom coordination. It also provides a local bonding model for local molecular orbital calculations that are based on the coordination and symmetry of TM and RE atoms and the orbital energies of their oxygen neighbors. These calculations provide important insights into the electronic structure of TM and RE dielectrics, and in particular the role of atomic d-state energies in providing a scaling parameter for conduction band offset energies between gate dielectrics and the Si substrate. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1687 / 1697
页数:11
相关论文
共 35 条
[1]   OPTICAL-PROPERTIES AND ELECTRONIC-STRUCTURE OF CROSSROADS MATERIAL MNTE [J].
ALLEN, JW ;
LUCOVSKY, G ;
MIKKELSEN, JC .
SOLID STATE COMMUNICATIONS, 1977, 24 (05) :367-370
[2]  
APPLEL G, UNPUB
[3]  
BALLHAUSEN CJ, 1964, MOL ORBITAL THEORY, pCH8
[4]   Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon [J].
Chambers, JJ ;
Parsons, GN .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) :918-933
[5]  
COTTON FA, 1972, INORG CHEM, pCH4
[6]  
Cox P. A., 1992, TRANSITION METAL OXI
[7]  
GRAY HB, 1962, ELECT CHEM BONDING, pCH9
[8]   OXYGEN-K NEAR-EDGE FINE-STRUCTURE - AN ELECTRON-ENERGY-LOSS INVESTIGATION WITH COMPARISONS TO NEW THEORY FOR SELECTED 3D TRANSITION-METAL OXIDES [J].
GRUNES, LA ;
LEAPMAN, RD ;
WILKER, CN ;
HOFFMANN, R ;
KUNZ, AB .
PHYSICAL REVIEW B, 1982, 25 (12) :7157-7173
[9]   Bonding and XPS chemical shifts in ZrSiO4 versus SiO2 and ZrO2:: Charge transfer and electrostatic effects -: art. no. 125117 [J].
Guittet, MJ ;
Crocombette, JP ;
Gautier-Soyer, M .
PHYSICAL REVIEW B, 2001, 63 (12)
[10]   Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1-x alloys [J].
Johnson, RS ;
Hong, JG ;
Lucovsky, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04) :1606-1610