The effect of dopants on the electronic structure of SnO2 thin film

被引：27

作者：

Liu, W ^{[1
]}

Cao, XP ^{[1
]}

Zhu, YF ^{[1
]}

Cao, LL ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Chem, Beijing 100084, Peoples R China

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2000年 / 66卷 / 1-3期

关键词：

dopants; electronic structure; SnO2;

D O I：

10.1016/S0925-4005(00)00347-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, the structure of SnO2 thin films doped with Pd, Sb, Pt and In, especially the effects of dopants on the electronic structure of SnO2 were studied by XPS and TEM. It was observed that the dopants not only changed the Fermi level but also influenced the distribution of electron state density (DESD) of Sn4d valence band. We also studied the electronic structure change of the doped SnO2 after H-2 adsorption. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：219 / 221

页数：3

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