Dielectric relaxation studies of Bi-doping effects on the oxygen-ion diffusion in La2-xBixMo2O9 oxide-ion conductors

被引:84
作者
Wang, XP [1 ]
Fang, QF [1 ]
Li, ZS [1 ]
Zhang, GG [1 ]
Yi, ZG [1 ]
机构
[1] Chinese Acad Sci, Key Lab Internal Frict & Defects Solids, Inst Solid State Phys, Hefei 230031, Peoples R China
关键词
D O I
10.1063/1.1518151
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two dielectric relaxation peaks associated with oxygen-ion diffusion in the oxide-ion conductors La2-xBixMo2O9 (x=0.05, 0.1, and 0.15) have been studied. It is found that the activation energies of the two peaks increase with increasing Bi-doping concentration, which results from the blocking effects of the lone-pair electrons of Bi3+ ions. From the different effects of Bi doping on the two peaks, the diffusion paths of oxygen ions corresponding to each peak are confirmed. Significantly, it is revealed that Bi doping could enhance the ionic conductivity of La2Mo2O9 at lower temperatures. (C) 2002 American Institute of Physics.
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页码:3434 / 3436
页数:3
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