Materials for solid-state gas sensors

被引：29

作者：

Gas'kov, AM ^{[1
]}

Rumyantseva, MN ^{[1
]}

机构：

[1] Moscow State Univ, Moscow 119899, Russia

来源：

INORGANIC MATERIALS | 2000年 / 36卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1007/BF02757935

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The major problems in the development of inorganic gas-sensor materials are discussed. The general principle of semiconductor gas sensors is considered, and the band-structure parameters sensitive to the gas-phase composition are determined. Ways of improving sensor selectivity are examined. The composition, microstructure, and gas sensitivity of nanocrystalline SnO2 and ZnO are investigated. The dopant content and grain size of Ni-doped SnO2 are optimized for H2S detection. The prospects of employing systems of two or more nanocrystalline oxides (nanocomposites) for gas detection are discussed.

引用

页码：293 / 301

页数：9

共 25 条

[1]

Bechstedt F., 1988, SEMICONDUCTOR SURFAC

[2] IR STUDY OF TIO2-BASED GAS-SENSOR MATERIALS - EFFECT OF RUTHENIUM ON THE OXIDATION OF NH3, (CH3)3N AND NO [J].