Chemical nitridation of GaAs(100) by hydrazine-sulfide water solutions

被引：14

作者：

Berkovits, VL ^{[1
]}

L'vova, TV ^{[1
]}

Ulin, VP ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

VACUUM | 2000年 / 57卷 / 02期

关键词：

D O I：

10.1016/S0042-207X(00)00126-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed for GaAs a new nitrogen chemical surface passivation. The passivation procedure that can be justified from chemical reasonings, consists of a wet treatment by a mixture of hydrazine and sodium sulfide solutions, and is proposed to produce an essentially Ga-terminated (1 0 0) surface covered with a monolayer of chemisorbed nitrogen. The as-treated surface reveals clear (1 x 1) RHEED pattern that confirms the formation of the thin and coherent GaN him. The chemical nitridation of GaAs surface produces an increase of photoluminescence intensity. This effect is found to be stronger and more stable in air ambient under above band-gap light excitation than that produced by sulfide passivation. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：201 / 207

页数：7

共 8 条

[1]

ANTIPOV VG, 1995, SEMICONDUCTORS+, V29, P946

[2] Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysis [J].

Berkovits, VL ;

Ulin, VP ;

Paget, D ;

Bonnet, JE ;

L'vova, TV ;

Chiaradia, P ;

Lantratov, VM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04) :2528-2538

[3] Effects of helicon-wave excited N2 plasma treatment on Fermi-level pinning in GaAs [J].

Hara, A ;

Kasahara, F ;

Wada, S ;

Ikoma, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3234-3240

[4]

KELLY JJ, 1988, PHILIPS TECH REV, V44, P61

[5] SUBSTRATE NITRIDATION EFFECTS ON GAN GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY USING RF-RADICAL NITROGEN-SOURCE [J].

KIKUCHI, A ;

HOSHI, H ;

KISHINO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :688-693

[6] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF CUBIC GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH DIMETHYLHYDRAZINE ON (001) GAAS [J].

KUWANO, N ;

NAGATOMO, Y ;

KOBAYASHI, K ;

OKI, K ;

MIYOSHI, S ;

YAGUCHI, H ;

ONABE, K ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :18-22

[7] Chemistry and kinetics of the GaN formation by plasma nitridation of GaAs:: An in situ real-time ellipsometric study [J].

Losurdo, M ;

Capezzuto, P ;

Bruno, G ;

Irene, EA .

PHYSICAL REVIEW B, 1998, 58 (23) :15878-15888

[8]

ULIN VP, 1997, P 192 M EL SOC STAT, V2, P2068

← 1 →