Combination of photo and atomic force microscope lithographies by use of an organosilane monolayer resist

被引:17
作者
Sugimura, H [1 ]
Nakagiri, N [1 ]
机构
[1] NIKON CO,TSUKUBA RES LAB,TSUKUBA,IBARAKI 30026,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 7B期
关键词
photolithography; AFM lithography; organosilane monolayer; resist; lateral force microscopy;
D O I
10.1143/JJAP.36.L968
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two lithographies basing different resolutions of micro and nanometer scales have been combined using a single organosilane monolayer as a resist for both. This monolayer resist was first patterned by irradiation with deep ultraviolet Light through a photomask. Prior to the second patterning by scanning probe lithography; the photopatterned monolayer was observed by an atomic force microscope (AFM) in lateral force microscopy (LFM) mode. Since the photodegraded monolayer showed stronger lateral force than the unirradiated monolayer, the photogenerated pattern on the monolayer was clearly imaged. Using this LFM image, the AFM probe was aligned on the photofabricated pattern before drawing additional patterns by scanning probe lithography.
引用
收藏
页码:L968 / L970
页数:3
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