Efficient photocarrier injection in a transition metal oxide heterostructure

被引：49

作者：

Muraoka, Y ^{[1
]}

Yamauchi, T ^{[1
]}

Ueda, Y ^{[1
]}

Hiroi, Z ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 49期

关键词：

D O I：

10.1088/0953-8984/14/49/104

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.

引用

页码：L757 / L763

页数：7

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