Silicon solar-cell processing for minimizing the influence of impurities and defects

被引:73
作者
Sopori, B [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
silicon; defects; solar cells; impurities;
D O I
10.1007/s11664-002-0030-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Commercial Si solar cells are fabricated on low-cost wafers that contain high concentrations of impurities and defects. To achieve high device efficiency, cell-fabrication processing must include steps that can remove as-grown impurities and defects as much as possible and passivate the remaining. However, to maintain the cost effectiveness, these processes must be included as a part of a typical cell-fabrication sequence without increasing the number of process steps. This paper discusses various solar-cell processing approaches for minimizing deleterious effects of impurities and defects to yield high efficiency.
引用
收藏
页码:972 / 980
页数:9
相关论文
共 9 条
[1]   THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J].
FOSSUM, JG ;
LINDHOLM, FA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :692-700
[2]   Iron and its complexes in silicon [J].
Istratov, AA ;
Hieslmair, H ;
Weber, ER .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (01) :13-44
[3]   Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties [J].
Sopori, B ;
Zhang, Y ;
Ravindra, NM .
JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (12) :1616-1627
[4]   Hydrogen in silicon: A discussion of diffusion and passivation mechanisms [J].
Sopori, BL ;
Deng, X ;
Benner, JP ;
Rohatgi, A ;
Sana, P ;
Estreicher, SK ;
Park, YK ;
Roberson, MA .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 41-2 :159-169
[5]  
SOPORI BL, 1998, AIP C P, V462, P341
[6]  
SOPORI BL, 1997, P ICDS 19 T TECH PUB, P527
[7]  
SOPORI BL, 1998, P 2 WORLD C PHOT SOL, P152
[8]  
SOPORI BL, 1994, P 12 EUR PHOT SOL EN, P1003
[9]  
SOPORI BL, P 9 WORKSH CRYST SIL