In-situ spectroscopic ellipsometry of HgCdTe

被引：13

作者：

Benson, JD

Cornfeld, AB

Martinka, M

Singley, KM

Derzko, Z

Shorten, PJ

Dinan, JH

机构：

[1] USA,RES LAB,FT BELVOIR,VA 22060

[2] JA WOOLLAM CO INC,LINCOLN,NE 68508

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 08期

关键词：

molecular beam epitaxy; spectroscopic ellipsometry;

D O I：

10.1007/BF02655042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.

引用

收藏

页码：1406 / 1410

页数：5

相关论文

共 14 条

[1]

ARWIN H, 1983, J APPL PHYS, V54, P7132, DOI 10.1063/1.331984

[2] NONDESTRUCTIVE ANALYSIS OF HG1-XCDXTE(X=0.00,0.20,0.29, AND 1.00) BY SPECTROSCOPIC ELLIPSOMETRY .2. SUBSTRATE, OXIDE, AND INTERFACE PROPERTIES [J].

ARWIN, H ;

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1316-1323

[3]

ASPNES DE, 1984, J VAC SCI TECHNOL A, V2, P1309, DOI 10.1116/1.572400

[4] BIAS-SWITCHABLE DUAL-BAND HGCDTE INFRARED PHOTODETECTOR [J].

BLAZEJEWSKI, ER ;

ARIAS, JM ;

WILLIAMS, GM ;

MCLEVIGE, W ;

ZANDIAN, M ;

PASKO, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1626-1632

[5] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL ;

CASSELMAN, TN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101

[6] REAL-TIME CONTROL OF THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDHGTE AND CDTE/HGTE SUPERLATTICES USING ELLIPSOMETRY [J].

HARTLEY, RH ;

FOLKARD, MA ;

CARR, D ;

ORDERS, PJ ;

REES, D ;

VARGA, IK ;

KUMAR, V ;

SHEN, G ;

STEELE, TA ;

BUSKES, H ;

LEE, JB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1410-1414

[7] ELLIPSOMETRIC PROFILING OF HGCDTE HETEROSTRUCTURES [J].

MCLEVIGE, WV ;

ARIAS, JM ;

EDWALL, DD ;

JOHNSTON, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (05) :2483-2486

[8] THE AUTOMATIC-DETERMINATION OF CADMIUM-MERCURY TELLURIDE COMPOSITION [J].

MICKLETHWAITE, WFH .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2382-2390

[9] APPLICATION OF SPECTROSCOPIC ELLIPSOMETRY FOR REAL-TIME CONTROL OF CDTE AND HGCDTE GROWTH IN AN OMCVD SYSTEM [J].

MURTHY, SD ;

BHAT, IB ;

JOHS, B ;

PITTAL, S ;

HE, P .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (05) :445-449

[10]

NYKLEBUST RL, 1979, 1106 NBS