Chemical vapor deposition growth and properties of TaCxNy

被引：39

作者：

Engbrecht, ER

Sun, YM

Smith, S

Pfiefer, K

Bennett, J

White, JM

Ekerdt, JG ^{[1
]}

机构：

[1] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

[2] Univ Texas, Dept Chem & Biochem, Austin, TX 78712 USA

[3] Int Sematech, Austin, TX 78741 USA

来源：

THIN SOLID FILMS | 2002年 / 418卷 / 02期

关键词：

copper; diffusion; tantalum; carbides;

D O I：

10.1016/S0040-6090(02)00724-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TaCxNy films were characterized and evaluated for suitability as copper diffusion barriers for advanced interconnect structures. Films were deposited from pentakis(dimethylamino)tantalum, Ta[N(CH3)(2)](5), and methane by thermal chemical vapor deposition (CVD) at 365 degreesC and plasma enhanced CVD (PECVD) at 185-245 degreesC. Film composition was characterized using in situ X-ray photoelectron spectroscopy. Electrical resistivities of 6320-19600 muOmega.cm were measured for thermal CVD films and 440-2360 muOmega.cm for PECVD films. Furthermore, PECVD films contained TaC crystallites, and surface roughness decreased from 1.98 to 1.26 nm with increasing temperature. Copper diffusion barrier effectiveness was evaluated for blanket film structures with copper and barrier films deposited in situ on SiO2 Secondary ion mass spectrometry depth profiling of annealed samples (8 h at 360 degreesC) with barrier thickness ranging from 4 to 10 nm indicated the barrier prevented copper diffusion to SiO2. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：145 / 150

页数：6

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