High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio

被引：39

作者：

Kotlyar, MV ^{[1
]}

O'Faolain, L ^{[1
]}

Wilson, R ^{[1
]}

Krauss, TF ^{[1
]}

机构：

[1] Univ St Andrews, Sch Phys & Astron, Ultrafast Photon Collaborat, St Andrews KY16 9SS, Fife, Scotland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 04期

关键词：

D O I：

10.1116/1.1767106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate etching conditions for photonic crystals (PhCs) in InGaAsP/InP and AlGaAs/GaAs using a new regime of CAME operation. We show that the beam voltage-current ratio is critical in obtaining high material/mask selectivity. For one-dimensional PhCs, i.e., air slots, selectivities of 22:1 and 50:1 were achieved in InP and GaAs, respectively, using a very high beam voltage (about 1500 V) and a low beam current (about 10 mA). Etched features were observed to be very smooth, i.e., edge roughness was low. Two-dimensional PhCs were etched in InGaAsP/InP under similar conditions achieving selectivities up to 27:1 and 34:1 for hole diameters of 170 and 270 nm, respectively. (C) 2004 American Vacuum Society.

引用

页码：1788 / 1791

页数：4

共 8 条

[1] Chlorine-based dry etching of III/V compound semiconductors for optoelectronic application [J].