Light emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by molecular beam epitaxy

被引：6

作者：

Ni, WX ^{[1
]}

Du, CX ^{[1
]}

Duteil, F ^{[1
]}

Pozina, G ^{[1
]}

Hansson, GV ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

基金：

瑞典研究理事会;

关键词：

electroluminescence; light emitting diode; hot electron; molar beam epitaxy; erbium; silicon;

D O I：

10.1016/S0040-6090(00)00903-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

p(+)-SiGe/i-Si/n-Si:Er:O/n(+)-Si tunneling diodes have been processed using layer structures prepared by molecular beam epitaxy (MBE). Electroluminescence has been observed at room temperature from these devices at reverse bias. The devices have been used for characterizing the optical activation of Er3+ ions in MBE Si:Er:O layers grown at different conditions. In the range of 400-575 degrees C, a high substrate temperature is favored for formation of Er emission centers, but this is limited by the silicidation process occurring above 600 degrees C. Several important device parameters such as the impact excitation cross section and various EL decay processes have been carefully studied. A fast decay (similar to 4 mu s) due to the Auger carrier transfer process is observed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：414 / 418

页数：5

共 10 条

[1] Light emission from Er-doped Si: Materials properties, mechanisms, and device performance [J].