Phase transition of the Si(001) surface below 100 K

被引：79

作者：

Kondo, Y

Amakusa, T

Iwatsuki, M

Tokumoto, H

机构：

[1] Joint Res Ctr Atom Technol, Angstrom Technol Partnership, Tsukuba, Ibaraki 3050046, Japan

[2] JEOL Ltd, Akishima, Tokyo 1968558, Japan

[3] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan

来源：

SURFACE SCIENCE | 2000年 / 453卷 / 1-3期

关键词：

scanning tunneling microscopy; silicon; surface structure; morphology; roughness; and topography; surface thermodynamics (including phase transitions);

D O I：

10.1016/S0039-6028(00)00391-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate, with scanning tunneling microscopy, the Si(001) surface at low temperatures. This surface consists of asymmetric (buckled) dimers at 110 K as has been reported previously. At 20 K. however, symmetric dimers dominate the surface regardless of the carrier type or the dopant concentration. Asymmetric dimers are observed only near defects at 20 K. Our results indicate that the Si(001) surface is nut c(4 x 2)-symmetric, but rather p(2 x 1)symmetric at the zero temperature limit, and suggest a reconsideration of its ground state. it is unusual that the higher symmetric phase is more stable than the less symmetric one. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：L318 / L322

页数：5

共 31 条

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