Prerequisites for high-quality magnetic tunnel junctions: XPS and NMR study of Co/Al bilayers

被引：9

作者：

de Gronckel, HAM

Kohlstedt, H ^{[1
]}

Daniels, C

机构：

[1] Res Ctr Julich, IFF, D-52425 Julich, Germany

[2] Res Ctr Julich, ISI, D-52425 Julich, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 04期

关键词：

D O I：

10.1007/s003390051063

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum films with thicknesses ranging from 1 nm to 12 nm have been sputtered on 20 nm thick Co layers. The properties of the Co/Al bilayers were studied by X-ray photoemission spectroscopy (XPS) and spin-echo nuclear magnetic resonance (NMR). Both methods show independently that a 1 nm Al film covers the Co surface completely. XPS and NMR also showed that layers thicker than 1 nm Al are not oxidized completely in ambient air. Similarities to and deviations from niobium with Al overlayers (Nb/Al) are described. Prerequisites for the fabrication of tunneling magnetoresistance devices based on Co or NiFe ferromagnets and an aluminum oxide barrier are discussed.

引用

页码：435 / 441

页数：7

共 33 条

[1] GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES [J].