A scalable single poly EEPROM cell for embedded memory applications

An increasing number of integrated circuits requires the embedding of a limited amount (up to 16-64 kbits) of EEPROM memory. For this application, low process complexity, robust structure and good reliability are more important than small cell size. In this paper we present the design and characterization of a single poly EEPROM cell, optimized for embedded applications, and characterized by a good shrink potential. A cell area of 68.7 mu m(2) has been obtained in 0.7 mu m technology, and electrical characterization has shown the possibility of achieving a programming time of less than 1 msec, while an endurance of more than 10 million cycles has been achieved at 125 degrees C, with a programming time of 2 msec. By further shrink of the same basic layout, cell areas of 55 and 44 mu m(2) have been obtained, and similar programming and endurance performances have been demonstrated. (C) 1997 Elsevier Science Ltd.