N-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine

被引:34
作者
Nishimori, T [1 ]
Nakano, K [1 ]
Sakamoto, H [1 ]
Takakuwa, Y [1 ]
Kono, S [1 ]
机构
[1] TOHOKU UNIV, SCI MEASUREMENTS RES INST, AOBA KU, SENDAI, MIYAGI 98077, JAPAN
关键词
D O I
10.1063/1.119922
中图分类号
O59 [应用物理学];
学科分类号
摘要
An n-type phosphorous (P) doped epitaxial diamond film with high conductivity was grown on a C(001) substrate by gas source molecular beam epitaxy using methane and tri-n-butylphosphine. The electrical conductivity of the diamond film was measured to be 0.33 (Omega cm)(-1) at 23 degrees C with its activation energy to be 0.12 eV. The Hall measurements showed n-type conduction and a carrier concentration of 1.6 x 10(18) cm(-3) at 400 degrees C, which is comparable to the P concentration determined by secondary-ion-mass spectroscopy. These indicate the formation of shallow P donors with high electrical activation efficiency. A p-n junction diode was fabricated by growing a P-doped epitaxial film on a boron-doped C(001) substrate, which showed for the first time a rectification ratio of similar to 10 at 10 V. (C) 1997 American Institute of Physics.
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页码:945 / 947
页数:3
相关论文
共 15 条
[1]   Boron-doped homoepitaxial diamond layers: Fabrication, characterization, and electronic applications [J].
Borst, TH ;
Weis, O .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1996, 154 (01) :423-444
[2]   ON SUBSTITUTIONAL NITROGEN DONOR IN DIAMOND [J].
FARRER, RG .
SOLID STATE COMMUNICATIONS, 1969, 7 (09) :685-+
[3]   GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED DIAMOND FILMS [J].
FLEMISH, JR ;
SCHAUER, SN ;
WITTSTRUCK, R ;
LANDSTRASS, MI ;
PLANO, MA .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :672-676
[4]   PROPERTIES OF BORON-DOPED EPITAXIAL DIAMOND FILMS [J].
FUJIMORI, N ;
NAKAHATA, H ;
IMAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (05) :824-827
[5]  
KAJIHARA SA, 1990, MATER RES SOC SYMP P, V162, P315
[6]   NITROGEN AND POTENTIAL NORMAL-TYPE DOPANTS IN DIAMOND [J].
KAJIHARA, SA ;
ANTONELLI, A ;
BERNHOLC, J ;
CAR, R .
PHYSICAL REVIEW LETTERS, 1991, 66 (15) :2010-2013
[7]  
KAMO M, 1991, MAT RES S C, P637
[8]   SCANNING-TUNNELING-MICROSCOPE OBSERVATION OF THE HOMOEPITAXIAL DIAMOND(001) 2X1 RECONSTRUCTION OBSERVED UNDER ATMOSPHERIC-PRESSURE [J].
KAWARADA, H ;
SASAKI, H ;
SATO, A .
PHYSICAL REVIEW B, 1995, 52 (15) :11351-11358
[9]   DIAMOND EPITAXIAL-GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH PURE METHANE [J].
NISHIMORI, T ;
SAKAMOTO, H ;
TAKAKUWA, Y ;
KONO, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10A) :L1297-L1300
[10]  
Nishimori T, 1996, DIAMOND FILM TECHNOL, V6, P301