Electron spin resonance and optical characterization of defects in microcrystalline silicon

被引：26

作者：

Vanecek, M

Poruba, A

Remes, Z

Rosa, J

Kamba, S

Vorlícek, V

Meier, J

Shah, A

机构：

[1] Acad Sci Czech Republ, Inst Phys, CZ-16200 Prague 6, Czech Republic

[2] Acad Sci Czech Republ, Inst Phys, CZ-18221 Prague, Czech Republic

[3] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00804-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electron spin resonance (ESR), constant photocurrent method (CPM), photothermal deflection spectroscopy (PDS), Raman and IR spectroscopy have been used to measure microcrystalline silicon films. Besides standard defects with a g-value of 2.0055, new defects with a g-value similar to 2.0030 have been created during annealing this material. Proportionality between the subgap optical absorption and ESR spin density has been observed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：519 / 523

页数：5

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