Si nanowire growth and characterization using a microelectronics-compatible catalyst: PtSi

被引:53
作者
Baron, T.
Gordon, M.
Dhalluin, F.
Ternon, C.
Ferret, P.
Gentile, P.
机构
[1] CEA, CNRS, UMR 5129, Lab Technol Microelect,Leti DTS, F-38054 Grenoble, France
[2] CEA, Leti, DOPT, F-38054 Grenoble, France
[3] CEA, DRFMC, SiNaPS, F-38054 Grenoble, France
关键词
D O I
10.1063/1.2402118
中图分类号
O59 [应用物理学];
学科分类号
摘要
Crystalline Si nanowires have been grown using a microelectronics-friendly solid-phase catalyst (PtSi) by chemical vapor deposition. Tapered growth occurs at high deposition temperatures (> 700 degrees C) due to uncatalyzed Si deposition at wire sidewalls, but this effect can be reduced at lower T (< 600 degrees C), while still maintaining reasonable growth rates (1 mu m/h). Electrical testing of individual nanowires using conductive atomic force microscopy on as-grown samples demonstrates that wires are conducting with intrinsic resistivities in the 10-50 Omega cm range. (c) 2006 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 12 条
[1]   Growth of Si nanocrystals on alumina and integration in memory devices [J].
Baron, T ;
Fernandes, A ;
Damlencourt, JF ;
De Salvo, B ;
Martin, F ;
Mazen, F ;
Haukka, S .
APPLIED PHYSICS LETTERS, 2003, 82 (23) :4151-4153
[2]   Vertical high-mobility wrap-gated InAs nanowire transistor [J].
Bryllert, T ;
Wernersson, LE ;
Fröberg, LE ;
Samuelson, L .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (05) :323-325
[3]   Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices [J].
De Salvo, B ;
Ghibaudo, G ;
Pananakakis, G ;
Masson, P ;
Baron, T ;
Buffet, N ;
Fernandes, A ;
Guillaumot, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) :1789-1799
[4]   Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].
Gudiksen, MS ;
Lauhon, LJ ;
Wang, J ;
Smith, DC ;
Lieber, CM .
NATURE, 2002, 415 (6872) :617-620
[5]  
Hansen M., 1958, CONSTITUTION BINARY, DOI DOI 10.1149/1.2428700
[6]   Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si [J].
Kamins, TI ;
Williams, RS ;
Chen, Y ;
Chang, YL ;
Chang, YA .
APPLIED PHYSICS LETTERS, 2000, 76 (05) :562-564
[7]   Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms [J].
Kamins, TI ;
Williams, RS ;
Basile, DP ;
Hesjedal, T ;
Harris, JS .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1008-1016
[8]   HIGH-TEMPERATURE STABILITY OF PTSI FORMED BY REACTION OF METAL WITH SILICON OR BY COSPUTTERING [J].
MURARKA, SP ;
KINSBRON, E ;
FRASER, DB ;
ANDREWS, JM ;
LLOYD, EJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6943-6951
[9]   Diameter control of Ti-catalyzed silicon nanowires [J].
Sharma, S ;
Kamins, TI ;
Williams, RS .
JOURNAL OF CRYSTAL GROWTH, 2004, 267 (3-4) :613-618
[10]  
SZE SM, 1981, PHYS SEMICONDCUTOR D