Phase reaction and diffusion path of the SiC/Ti system

被引：151

作者：

Naka, M

Feng, JC

Schuster, JC

机构：

[1] Joining and Welding Research Institute, Osaka University

[2] Joining and Welding Research Institute, Osaka University

[3] National Key Laboratory, Advanced Welding Production Technology, Harbin Institute of Technology

[4] Institute of Physical Chemistry, University of Vienna

来源：

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1997年 / 28卷 / 06期

关键词：

Material Transaction; Diffusion Path; Reaction Layer; Bonding Temperature; Bonding Time;

D O I：

10.1007/s11661-997-0275-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1373 to 1773 K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673 K using Ti foil with a thickness of 50 mu m. At a bonding time of 0.3 ks, TiC at the Ti side and a mixture of Ti5Si3Cx and TiC at the SiC side were formed, yielding the structure sequence of beta-Ti/Ti + TiC/Ti5Si3Cx + TiC/SiC. Furthermore, at the bonding time of 0.9 ks, a Ti5Si3Cx layer phase appeared between SiC and the mixture of Ti5Si3Cx and TiC. Upon the formation of Ti3SiC2 (T phase) after the bonding time of 3.6 ks, the complete diffusion path was observed as follows: beta-Ti/Ti + TiC/Ti5Si3Cx + TiC/Ti5Si3Cx/Ti3SiC2/SiC. The activation energies for growth of TiC, Ti5Si3Cx, and Ti3SiC2 were 194, 242, and 358 kJ/mol, respectively.

引用

页码：1385 / 1390

页数：6

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