Development of DLC film technology for electronic application

被引:20
作者
Baranov, AM
Varfolomeev, AE
Nefedov, AA
Anderle, M
Calliari, L
Speranza, G
Landini, N
机构
[1] Res Inst Vacuum Tech, Moscow 113105, Russia
[2] RRC Kurchatov Inst, Moscow 123182, Russia
[3] Ist Ric Sci & Tecnol, ITC, I-38050 Trent, Italy
关键词
diamond-like carbon; in situ; X-ray photoelectron spectroscopy; X-ray reflectivity;
D O I
10.1016/S0925-9635(99)00251-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The issues related to the development of a carbon film technology for microelectronic applications are considered in this paper. To this end, carbon films deposited by plasma assisted chemical vapour deposition (PACVD) and by magnetron sputtering of a graphite target are analysed comparatively. A great deal of information about them is shown to be gained by combining two analytical methods. On the one hand, in situ X-ray reflectivity (XRR) allows us to monitor, in real time: parameters such as thickness, density and surface roughness of the growing film. On the other hand, ex situ X-ray photoelectron spectroscopy (XPS) provides knowledge about the chemical composition and the electronic structure of the film surface region. Combination of such complementary analytical techniques results in a powerful tool for the development of the required technology to enable the use of diamond-like carbon (DLC) films in microelectronics devices. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:649 / 653
页数:5
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