Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3

被引：126

作者：

Park, Pan Kwi ^{[1
]}

Kang, Sang-Won ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2387126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

HfO2 films with an enhanced dielectric constant, prepared through phase transition engineering by the addition of Al2O3, were deposited by plasma-enhanced atomic layer deposition adopting a supercycle concept. After an annealing step at 700 degrees C, the tetragonal phase, which is a high-temperature phase of HfO2, was stabilized completely at room temperature and the crystallographic direction was changed to the preferred (002) orientation. As a result, Hf aluminate film with a (002)-oriented tetragonal phase had a dielectric constant of 47, approximately twice as large as the reported value of HfO2 film with a monoclinic phase.

引用

页数：3

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