magnetoelectric effect;
magnetic field;
magnetoelectric sensor;
D O I:
10.1080/00150190190028220
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
As an alternative to semiconductor sensor and sensor on hermetic contacts we present sensor based on magnetoelectric effect. In researches there are used the magnetoelectric bulk composites containing 95% of yttrium-iron garnet and 5% of lead zirconate titanate (PZT) and multilayer composite material consisting of PZT and Ni0.5Zn0.5Fe2O4. The magnetoelectric sensor represents the disk or plate from the magnetoelectric material with two electrodes for connecting to the voltage meter. The action of the sensor is based on magnetoelectric interaction. The experimental model was made for determining the basic parameters of the magnetoelectric sensor and optimization of its design.