Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

被引：54

作者：

Cerne, J

Kono, J

Inoshita, T

Sherwin, M

Sundaram, M

Gossard, AC

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,CTR TERAHERTZ SCI & TECHNOL,SANTA BARBARA,CA 93106

[3] JAPAN SCI & TECHNOL CORP,QUANTUM TRANSIT PROJECT,TOKYO 153,JAPAN

[4] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 26期

关键词：

D O I：

10.1063/1.119227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at frequency omega(nir) and intense far-infrared (FIR) radiation from a free-electron laser at omega(fir). Magnetic fields up to 9 T are applied. Strong and narrow sidebands are observed at omega(sideband)=omega(nir)+/-2 omega(fir). The intensity of the sidebands is enhanced when either omega(sideband) or omega(nir) is near the onset of NIR absorption in the quantum well, or when omega(fir) is near the free-electron cyclotron frequency. We attribute these sidebands to four-wave mixing of NIR and FIR photons whose energies ies differ by more than a factor of 100. (C) 1997 American Institute of Physics.

引用

页码：3543 / 3545

页数：3

共 19 条

[1] FREE-CARRIER-INDUCED 3RD-ORDER OPTICAL NONLINEARITIES IN SEMICONDUCTORS [J].