Control of conduction band offset in wide-gap Cu(In,Ga)Se2 solar cells

被引：101

作者：

Minemoto, T

Hashimoto, Y

Shams-Kolahi, W

Satoh, T

Negami, T

Takakura, H

Hamakawa, Y

机构：

[1] Matsushita Elect Ind Co Ltd, Living Environm Dev Ctr, Kyoto 5120237, Japan

[2] Ritsumeikan Univ, Fac Sci & Engn, Dept Photon, Shiga 5258577, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 75卷 / 1-2期

关键词：

Cu(In; Ga)Se-2; Zn1-xMgxO; window layer; conduction band offset;

D O I：

10.1016/S0927-0248(02)00120-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effects of conduction band offset of window/Cu(In,Ga)Se-2 (CIGS) layers in wide-gap CIGS based solar cells are investigated. In order to control the conduction band offset, a Zn1-xMgxO film was utilized as the window layer. We fabricated CIGS solar cells consisting of an ITO/Zn1-xMgxO/CdS/CIGS/Mo/glass structure with various CIGS band gaps (E-g approximate to 0.97 -1.43 eV). The solar cells with CIGS band gaps wider than 1.15 eV showed higher open circuit voltages and fill factors than those of conventional ZnO/CdS/CIGS solar cells. The improvement is attributed to the reduction of the CdS/CIGS interface recombination, and it is also supported by the theoretical analysis using device simulation. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：121 / 126

页数：6

共 14 条

[1]

Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO

[2]

2-G

[3] Improved Js']Jsc in CIGS thin film solar cells using a transparent conducting ZnO:B window layer [J].