S-band erbium-doped silica fibre amplifier with flattened-gain of over 21 dB

被引：13

作者：

Ono, H ^{[1
]}

Yamada, M ^{[1
]}

Shimizu, M ^{[1
]}

机构：

[1] NTT Corp Morinosato, Photon Labs, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 19期

关键词：

D O I：

10.1049/el:20020776

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A gain-flattened erbium-doped silica fibre amplifier (EDSFA) has been developed for amplifying WDM signals in the S-band. The EDSFA exhibits a signal gain of over 21 dB, a gain excursion of less than 1.9 dB, and a noise figure of less than 6.7 dB in the 1491-1518 run wavelength range.

引用

页码：1084 / 1086

页数：3

共 6 条

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OPTICS LETTERS, 1999, 24 (23) :1684-1686

[6]

SEGI T, 2001, P ECOC2001

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